Dielectric Patterning
Controlled plasma etching for SiO2, SiNx, and related dielectric films used in research device stacks.
SiO2 / SiNxMask selectivityEndpoint ready
Equipment Platform
Reactive Ion Etcher (RIE)
A general-purpose RIE etcher for reliable anisotropic plasma etching — dielectric patterning, polymer removal, surface activation, and device prototyping in university and R&D lab environments.
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This platform is configured and quoted to your process — it is not sold online.
Wafer Size
4-12 in
RF Power
300-1000 W
Gas Lines
4 lines
Temp Range
-70 to 200 C
Process-first configuration
Tune the ion-driven etch around the material stack.
RIE decisions usually start with the target film, mask selectivity, ion directionality, allowable damage, pressure window, gas chemistry, and sample handling. This page keeps those process questions visible before narrowing the platform configuration.
Polymer And Resist Removal
Oxygen and mixed-gas RIE workflows for photoresist, polymer films, surface cleaning, and device preparation.
O2 plasmaPolymer removalSurface activation
Device Prototyping
General-purpose anisotropic etching for university labs and R&D teams building repeatable process windows.
Semiconductor R&DMEMS supportPrototype workflows
Core Process Windows
What this platform is built to control.
Ion directionality
RF-driven sheath control supports anisotropic etch profiles for moderate-aspect-ratio features.
Chemistry flexibility
Four gas lines support common fluorine, oxygen, argon, and mixed-gas research recipes.
Research lab efficiency
Compact footprint, configurable loading, and automated recipe control suit repeated R&D workflows.
Technical Specifications
Clear screening values for RIE process planning.
Core values are taken from the equipment summary and presented for fast process screening. Final configuration should be confirmed with engineering during quote review.
- Wafer Size
- 4-12 in
- RF Power
- 300-1000 W
- Frequency
- 13.56 MHz
- Gas System
- 4 gas lines
- Temperature
- -70 to 200 C
- Materials
- Si, SiO2, SiNx, metals, polymers
- Loading
- Open-load or load-lock
Applications
Built for general-purpose dry etch workflows.
Semiconductor R&D
Dielectric patterning
Polymer removal
Surface activation
Device prototyping
MEMS fabrication
Process evidence
Process Results
Representative SEM results achieved on the RIE platform family: silicon arrays and lens structures, InP ridges, and SiC etch profiles.
Related Resources
Help engineers choose the right etch path.
FAQ
Frequently Asked Questions
What materials can the RIE platform process?
The RIE platform supports silicon, silicon dioxide, silicon nitride, metals, polymers, and common research process stacks used in dielectric patterning, polymer removal, surface activation, and device prototyping.
When should I choose RIE instead of ICP-RIE?
RIE is a strong fit for general-purpose dry etching, moderate anisotropy, dielectric patterning, polymer removal, and cost-conscious R&D workflows. ICP-RIE is better when the process needs high-density plasma, higher aspect ratios, or independent control of plasma density and ion energy.
What core specifications define the RIE platform?
The RIE platform supports 4 inch to 12 inch wafers, 300-1000 W RF power at 13.56 MHz, 4 process gas lines, and -70 to 200 C temperature control.
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