Dielectric Films
SiO2, SiNx, and SiON deposition for passivation, interlayer dielectric, optical, and MEMS workflows.
SiO2 / SiNx / SiONStress controlLow-temperature deposition
Equipment Platform
PECVD Thin Film Deposition Platform
Low-temperature plasma-enhanced CVD for dielectric films, passivation layers, optical coatings, MEMS stacks, and research thin-film process development.
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This platform is configured and quoted to your process — it is not sold online.
Wafer Size
4-12 in
RF Power
500-2000 W
Gas Lines
Up to 6
Temp Range
20 to 400 C
Process-first configuration
Build the film stack around temperature, stress, and chemistry.
PECVD selection starts with the target film, allowed thermal budget, stress target, refractive index, gas chemistry, deposition rate, and wafer handling requirements. The platform is configured around those process constraints rather than a fixed catalog setup.
Semiconductor Films
a-Si:H and related plasma-deposited films for device research, sensors, and thin-film electronics.
a-Si:HComposition tuningResearch stacks
Protective Coatings
SiC and optional DLC process configurations for barrier, encapsulation, and protective film development.
SiCDLC optionalEncapsulation
Core Process Windows
What this platform is built to control.
Low-temperature deposition
Plasma-assisted chemistry enables useful film growth at lower substrate temperatures than thermal CVD.
Film stress tuning
Single or dual-frequency RF configurations support stress and ion-bombardment tuning for MEMS and optical stacks.
Multi-material flexibility
Configurable gas delivery supports dielectric, semiconductor, and protective coating recipes in one platform family.
Technical Specifications
Clear screening values for PECVD process planning.
Core values are taken from the equipment summary and legacy datasheet table for fast process screening. Final configuration should be confirmed with engineering during quote review.
- Wafer Size
- 4-12 in
- RF Power
- 500-2000 W
- Frequency
- 13.56 MHz / 400 kHz
- Temperature
- 20 to 400 C
- Gas System
- Up to 6 gas lines
- Uniformity
- <5%
- Vacuum System
- Roots pump + mechanical pump
- Loading
- Open-load or load-lock
Applications
Built for thin-film process development.
Passivation layers
Interlayer dielectrics
Optical coatings
MEMS membranes
Device encapsulation
Flexible electronics
Process evidence
Process Results
Four-inch whole-wafer SiO2 deposition achieved on the PECVD platform family.
Related Resources
Help engineers choose the right deposition path.
FAQ
Frequently Asked Questions
What films can the PECVD platform deposit?
The PECVD platform supports common dielectric and semiconductor films including SiO2, SiNx, a-Si:H, SiC, SiON, and optional DLC process configurations.
Why choose PECVD instead of thermal CVD?
PECVD uses plasma-assisted chemistry to enable film deposition at lower substrate temperatures, making it useful for passivation, encapsulation, MEMS, optical coatings, and temperature-sensitive research stacks.
What core specifications define the PECVD platform?
The PECVD platform supports 4 inch to 12 inch wafers, 500 to 2000 W RF power at 13.56 MHz and/or 400 kHz, 20 to 400 C temperature control, up to 6 gas lines, and <5% film uniformity.
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Build a repeatable PECVD film process with NineScrolls
Share your target film, substrate temperature limit, gas chemistry, wafer size, stress target, and timeline.