Skip to main content

Equipment Platform

PECVD Thin Film Deposition Platform

Low-temperature plasma-enhanced CVD for dielectric films, passivation layers, optical coatings, MEMS stacks, and research thin-film process development.

Request QuoteTalk to an Engineer

This platform is configured and quoted to your process — it is not sold online.

NineScrolls PECVD thin film deposition platform

Wafer Size

4-12 in

RF Power

500-2000 W

Gas Lines

Up to 6

Temp Range

20 to 400 C

Process-first configuration

Build the film stack around temperature, stress, and chemistry.

PECVD selection starts with the target film, allowed thermal budget, stress target, refractive index, gas chemistry, deposition rate, and wafer handling requirements. The platform is configured around those process constraints rather than a fixed catalog setup.

Dielectric Films

SiO2, SiNx, and SiON deposition for passivation, interlayer dielectric, optical, and MEMS workflows.

SiO2 / SiNx / SiONStress controlLow-temperature deposition

Semiconductor Films

a-Si:H and related plasma-deposited films for device research, sensors, and thin-film electronics.

a-Si:HComposition tuningResearch stacks

Protective Coatings

SiC and optional DLC process configurations for barrier, encapsulation, and protective film development.

SiCDLC optionalEncapsulation

Core Process Windows

What this platform is built to control.

Compare ALD

Low-temperature deposition

Plasma-assisted chemistry enables useful film growth at lower substrate temperatures than thermal CVD.

Film stress tuning

Single or dual-frequency RF configurations support stress and ion-bombardment tuning for MEMS and optical stacks.

Multi-material flexibility

Configurable gas delivery supports dielectric, semiconductor, and protective coating recipes in one platform family.

Technical Specifications

Clear screening values for PECVD process planning.

Core values are taken from the equipment summary and legacy datasheet table for fast process screening. Final configuration should be confirmed with engineering during quote review.

Wafer Size
4-12 in
RF Power
500-2000 W
Frequency
13.56 MHz / 400 kHz
Temperature
20 to 400 C
Gas System
Up to 6 gas lines
Uniformity
<5%
Vacuum System
Roots pump + mechanical pump
Loading
Open-load or load-lock

Applications

Built for thin-film process development.

Passivation layers

Interlayer dielectrics

Optical coatings

MEMS membranes

Device encapsulation

Flexible electronics

Process evidence

Process Results

Four-inch whole-wafer SiO2 deposition achieved on the PECVD platform family.

Four-inch silicon wafer after silicon dioxide film deposition
Four-inch whole-wafer SiO2 deposition

FAQ

Frequently Asked Questions

What films can the PECVD platform deposit?

The PECVD platform supports common dielectric and semiconductor films including SiO2, SiNx, a-Si:H, SiC, SiON, and optional DLC process configurations.

Why choose PECVD instead of thermal CVD?

PECVD uses plasma-assisted chemistry to enable film deposition at lower substrate temperatures, making it useful for passivation, encapsulation, MEMS, optical coatings, and temperature-sensitive research stacks.

What core specifications define the PECVD platform?

The PECVD platform supports 4 inch to 12 inch wafers, 500 to 2000 W RF power at 13.56 MHz and/or 400 kHz, 20 to 400 C temperature control, up to 6 gas lines, and <5% film uniformity.

Request a quote

Build a repeatable PECVD film process with NineScrolls

Share your target film, substrate temperature limit, gas chemistry, wafer size, stress target, and timeline.