Metal Films
DC magnetron workflows for conductive films, contact layers, seed layers, and research metallization stacks.
DC sputteringConductive targetsMetallization
Equipment Platform
PVD Magnetron Sputtering Platform
Physical vapor deposition for metal, dielectric, nitride, oxide, magnetic, optical, and compound thin films using configurable DC/RF magnetron sputtering sources.
Wafer Size
4-12 in
Targets
2-6 configurable
Base Pressure
<5x10^-7 Torr
Uniformity
< +/-5%
Process-first configuration
Build the PVD stack around targets, pressure, and substrate temperature.
Sputter selection starts with target materials, DC or RF power mode, reactive gas needs, base pressure, substrate temperature, wafer size, uniformity target, and whether the process needs multilayer or co-sputtering capability.
Reactive Sputtering
Reactive oxygen or nitrogen process windows for oxide and nitride films with controlled stoichiometry.
Oxides / nitridesO2 / N2 chemistryStoichiometry control
Multi-Target PVD
Configurable target positions support multilayer films, alloy development, magnetic stacks, and co-sputtering workflows.
2-6 targetsCo-sputteringMultilayers
Core Process Windows
What this platform is built to control.
Target configuration
Two to six independently configurable targets support single-material, multilayer, alloy, and co-sputtered film development.
DC/RF magnetron modes
Power-mode flexibility supports conductive and insulating target materials across metal, oxide, nitride, and optical films.
Vacuum and temperature control
Low base pressure and configurable substrate temperature help tune density, adhesion, stress, and film morphology.
Technical Specifications
Clear screening values for Sputter process planning.
Core values are taken from the equipment summary and legacy datasheet table for fast process screening. Final target count, power supplies, gases, and substrate heating should be confirmed with engineering during quote review.
- Wafer Size
- 4-12 in
- Targets
- 2-6 configurable
- Substrate Temperature
- Water-cooled to 1200 °C
- Base Pressure
- <5x10^-7 Torr
- Uniformity
- < +/-5%
- Power Modes
- DC / RF magnetron
- Process Modes
- Metal, reactive, co-sputter
- Loading
- Open-load or load-lock
Applications
Built for PVD thin-film process development.
Metal contacts
Magnetic films
Optical coatings
Compound semiconductors
Protective coatings
Multilayer stacks
Research evidence
Peer-reviewed research
Published work using the magnetron sputtering platform we represent · 2 papers
- View source
Microalloying induced stable welded interfaces for highly reversible zero-excess sodium metal batteries
Energy & Environmental Science 2024
- View source
Tuning the Catalytic Selectivity Toward C2+ Oxygenate Products by Manipulating Cu Oxidation States in CO Electroreduction
ACS Applied Materials & Interfaces 2024
Related Resources
Help engineers choose the right PVD process path.
FAQ
Frequently Asked Questions
What materials can the Sputter platform deposit?
The Sputter platform supports metal, oxide, nitride, magnetic, compound semiconductor, optical, and protective thin-film workflows depending on target configuration and DC, RF, or reactive sputtering mode.
When should I choose sputtering instead of ALD or PECVD?
Choose sputtering for broad PVD material compatibility, metal and magnetic films, conductive coatings, optical stacks, and multi-target or co-sputtering workflows. ALD is stronger for atomic-scale conformality, while PECVD is stronger for high-rate low-temperature dielectric films.
What core specifications define the Sputter platform?
The Sputter platform supports 4 inch to 12 inch wafers, 2 to 6 independently configurable targets, substrate temperature from water-cooled to 1200 °C, base pressure below 5x10^-7 Torr, and < +/-5% film non-uniformity.
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