Dep/Sputter Gap-Fill
High-density plasma deposition plus controlled ion sputtering helps prevent top pinch-off and supports void-free fill strategies.
Dep/sputter balanceVoid suppressionD/S tuning
Equipment Platform
HDP-CVD Gap-Fill Deposition Platform
High-density plasma CVD for dense dielectric films, void-free trench fill, STI, IMD, PMD, and advanced packaging process development.
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This platform is configured and quoted to your process — it is not sold online.
Wafer Size
4-12 in
Source RF
1000-3000 W
Bias RF
300-1000 W
Gas Lines
6
Process-first configuration
Tune the process around deposition, sputter-back, and gap geometry.
HDP-CVD selection starts with feature aspect ratio, target dielectric, D/S ratio, source power, bias power, gas chemistry, wafer temperature, film stress, and whether the process needs blanket dense films or true gap-fill performance.
Dense Dielectrics
Process windows support SiO2, Si3N4, SiON, SiC, low-k, and doped silicate glass film development.
SiO2 / Si3N4Low-k dielectricsBSG / PSG / BPSG
Low Thermal Budget
20 to 200 C operation supports research flows where dense films and plasma-assisted fill are needed without high thermal exposure.
20 to 200 CDense filmsResearch stacks
Core Process Windows
What this platform is built to control.
Gap-fill quality
The primary process target is void suppression in trenches, vias, and dense topography where conformal deposition alone can close the opening too early.
Source and bias balance
Independent source and bias RF ranges let engineers tune plasma density, ion energy, resputtering, and net deposition behavior.
Film density and uniformity
HDP-CVD is configured for dense dielectric films with <5% uniformity and process windows for stress, wet etch rate, and dielectric quality.
Technical Specifications
Clear screening values for HDP-CVD process planning.
Core values are taken from the equipment summary and legacy page for fast process screening. Final gas chemistry, source, bias, loading, and chamber options should be confirmed with engineering during quote review.
- Wafer Size
- 4-12 in
- Source RF
- 1000-3000 W
- Bias RF
- 300-1000 W
- Temperature
- 20 to 200 C
- Gas System
- 6 gas lines
- Uniformity
- <5%
- Loading
- Open-load or load-lock
- Footprint
- Approx. 1.0m x 1.5m
Applications
Built for dielectric gap-fill and dense film development.
STI gap-fill
IMD / PMD dielectrics
Advanced packaging dielectrics
TSV isolation workflows
MEMS cavity sealing
Silicon photonics cladding
Related Resources
Help engineers choose the right gap-fill and dielectric deposition path.
Resource
HDP-CVD In-Depth Guide
Process principles, gap-fill behavior, PECVD and ALD comparison, and equipment selection
Resource
HDP-CVD Applications
STI, IMD, PMD, advanced packaging, D/S ratio optimization, and void-free fill strategies
Resource
PECVD vs ALD vs Sputtering
Deposition technology comparison for thin-film process planning
FAQ
Frequently Asked Questions
What is HDP-CVD used for?
HDP-CVD is used for high-density dielectric films and void-free gap-fill in high-aspect-ratio features, including STI, IMD, PMD, TSV-related dielectrics, MEMS cavity sealing, and advanced packaging workflows.
How is HDP-CVD different from PECVD?
HDP-CVD combines plasma-enhanced deposition with ion-assisted sputtering. That dep/sputter balance keeps feature openings clear during deposition, improving gap-fill where standard PECVD can pinch off and form voids.
What core specifications define the HDP-CVD platform?
The HDP-CVD platform supports 4 inch to 12 inch wafers, 1000 to 3000 W source RF, optional 300 to 1000 W bias RF, 20 to 200 C operation, a 6-line gas system, and <5% uniformity.
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