Photoresist Stripping
Oxygen plasma chemistry removes PR and organic films through controlled ashing while reducing wet-strip chemical burden.
PR removalResist ashDescum
Equipment Platform
Plasma Photoresist Stripping Platform
Dedicated plasma stripping and ashing for photoresist removal, post-etch residue cleaning, organic contamination removal, and damage-sensitive semiconductor process flows.
Wafer Size
4-12 in
RF Power
300-1000 W
Temperature
5 to 200 °C
Endpoint
Automated
Process-first configuration
Tune the strip process around resist chemistry, residue type, and damage budget.
Striper selection starts with resist thickness, hard-bake history, wafer size, temperature limit, endpoint strategy, residue type, target gas chemistry, and whether the process must protect low-k, Cu, III-V, MEMS, or 2D material stacks.
Post-Etch Residue
Process windows can target polymer sidewall residue, organic contamination, and post-patterning clean-up after dry etch steps.
Polymer residueOrganic filmsPost-etch clean
Damage-Sensitive Cleaning
Temperature, ion exposure, and gas chemistry selection matter when cleaning low-k, Cu, III-V, MEMS, and 2D material stacks.
Low damageEndpoint controlSensitive stacks
Core Process Windows
What this platform is built to control.
Strip rate and temperature
RF power and 5 to 200 °C wafer-stage control help engineers balance strip rate, residue removal, and thermal budget for resist and polymer workflows.
Endpoint and repeatability
Automated endpoint detection and repeatable process recipes support cleaner handoff from lithography and etch into deposition, metrology, or bonding steps.
Gas chemistry selection
O2, O2/CF4, O2/N2, H2/N2, forming gas, and Ar/O2 decisions depend on resist condition, residue chemistry, and underlying material sensitivity.
Technical Specifications
Clear screening values for plasma stripping process planning.
Core values are taken from the equipment summary, legacy page, and stripping equipment guide for fast process screening. Final gas manifold, vacuum, wafer handling, endpoint, and temperature options should be confirmed with engineering during quote review.
- Wafer Size
- 4-12 in
- RF Power
- 300-1000 W
- Temperature
- 5 to 200 °C
- Endpoint Detection
- Automated
- Footprint
- Approx. 0.8m x 0.8m
- Gas System
- 2 lines standard / expandable
- Vacuum System
- Mechanical pump
- Materials
- PR, PMMA, PS nanospheres, 2D materials, organic contaminants
Applications
Built for resist strip, ashing, and residue-cleaning workflows.
Photoresist stripping
Plasma ashing
Post-etch residue cleaning
Organic contamination removal
Surface activation and descum
2D material residue cleaning
Research evidence
Peer-reviewed research
Related Resources
Help engineers choose the right stripping and cleaning path.
Resource
Plasma Stripping & Ashing Guide
O2 plasma chemistry, downstream vs direct plasma, gas selection, endpoint detection, and equipment selection
Resource
Stripping Equipment Selection Guide
Barrel, downstream, and RIE-mode architectures, temperature effects, endpoint methods, and striper vs plasma cleaner decisions
Resource
Post-Etch Cleaning & Residue Removal
Residue types, dry and wet cleaning methods, in-situ vs ex-situ tradeoffs, and damage-free cleaning strategies
FAQ
Frequently Asked Questions
When should I choose a dedicated plasma striper instead of a plasma cleaner?
Choose a dedicated plasma striper when resist removal, ashing, post-etch residue cleaning, endpoint detection, wafer-scale uniformity, and controlled temperature are the core process requirements. A plasma cleaner is better for lower-power surface activation, bonding preparation, and general sample cleaning.
What materials can the Striper process?
The Striper is positioned for organic materials including PR, PMMA, PS nanospheres, polymer residue, 2D material process residues, and organic contamination removal.
What core specifications define the Striper platform?
The Striper supports 4 inch to 12 inch wafers, 300 to 1000 W RF power, 5 to 200 °C temperature control, automated endpoint detection, and an approx. 0.8m x 0.8m compact footprint.
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