Space-Constrained Labs
The SV-RIE format fits RIE capability into a compact footprint for universities, shared labs, and pilot-scale environments.
700 x 793 mmOne-piece designResearch lab fit
Equipment Platform
Compact Benchtop RIE Etcher (SV-RIE)
A space-efficient SV-RIE platform for labs that need true anisotropic plasma etching capability without the footprint of a full-size RIE system.
RF Power
300 or 500 W
Wafer Size
Up to 8 in
Footprint
700 x 793 mm
Best For
R&D / FA labs
Process-first configuration
Bring true RIE control into smaller research spaces.
Compact RIE selection starts with the materials you need to etch, target anisotropy, available lab footprint, RF power requirement, gas chemistry, and whether the workflow is routine resist removal, failure analysis, or rapid device prototyping.
Polymer And Resist Workflows
Supports common PR, PMMA, organic polymer, and descum workflows where plasma cleaner capability is not enough.
PR removalPMMA etchingO2 plasma workflows
Failure Analysis And Prototyping
Useful for package opening, passivation access, and rapid process development where labs need responsive in-house etch access.
Failure analysisPassivation removalRapid R&D
Core Process Windows
What this compact platform is built to control.
Footprint efficiency
The defining constraint is lab space: SV-RIE keeps true reactive ion etching capability available to teams that cannot allocate a full-size system footprint.
Model and RF selection
Model number sets maximum wafer size (4, 6, or 8 inches) and RF power is chosen separately at 300 W or 500 W, so labs pay for the sample size and process window they actually need.
Lab-scale process flexibility
The platform is positioned for photoresist, PMMA, HMDS, organic films, and Group IV and silicon-based process stacks in R&D settings.
Technical Specifications
Key specifications for Compact RIE process planning and model selection.
Review series-level capabilities for initial process and model selection. Gas routing is configured per application within the 2-3-line system; our engineering team will confirm the manifold, pump, wafer handling, and model during quote review.
- Models
- SHL100SV-RIE (up to 4 in) / SHL150SV-RIE (up to 6 in) / SHL200SV-RIE (up to 8 in)
- Wafer Size
- Up to 8 in, downward compatible
- RF Power
- 0-300 W or 0-500 W, configuration dependent
- Frequency
- 13.56 MHz, automatic matching
- Footprint
- 700 x 793 mm
- Materials
- PR, PMMA, HMDS, organic films, Group IV and silicon-based materials
- Process Gases
- 2-3 lines: O2 / N2 / Ar
- Pump System
- Oil or dry backing pump
Applications
Built for compact R&D etch workflows.
Space-constrained research labs
Failure analysis
Photoresist removal
Polymer descum
Passivation layer removal
Rapid device prototyping
Research evidence
Peer-reviewed research
Related Resources
Help engineers choose the right compact etch path.
Resource
Reactive Ion Etching Guide
RIE principles, process control, and equipment selection
Resource
Semiconductor Etchers Overview
How to choose RIE, ICP-RIE, DRIE, IBE, and compact etch platforms
Resource
PE vs RIE vs ICP-RIE
Plasma mode comparison for process and equipment planning
FAQ
Frequently Asked Questions
What makes the Compact RIE different from a standard RIE system?
The Compact RIE (SV-RIE) is a one-piece platform that fits true reactive ion etching capability into a 700 x 793 mm footprint, so research and failure analysis groups can run RIE processes without allocating a full-size system bay.
What materials can the Compact RIE process?
The Compact RIE is specified for photoresist, PMMA, HMDS, organic films, and Group IV and silicon-based materials. Specific film stacks and the matching gas chemistry are confirmed with process engineering during quote review.
Which RF power options are available?
Model number tracks maximum wafer size: SHL100SV-RIE up to 4 inches, SHL150SV-RIE up to 6 inches, and SHL200SV-RIE up to 8 inches. RF power is a separate configuration choice of 0-300 W or 0-500 W at 13.56 MHz with automatic matching.
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Fit a true RIE process window into your lab
Share your target films, wafer size, process gases, RF power needs, available footprint, and timeline.