Equipment Platform

ICP-RIE Plasma Etching Platform

Q: What applications is the ICP-RIE platform best suited for?

The ICP-RIE platform is designed for high-aspect-ratio silicon etching, MEMS fabrication, compound semiconductor processing, diamond processing, photonics, advanced packaging, and process development where independent plasma density and ion energy control matter.

Q: What is the difference between ICP-RIE and RIE?

ICP-RIE uses a high-density inductively coupled plasma source with separate bias control, allowing plasma density and ion energy to be tuned independently. Standard RIE is simpler and useful for many general etch workflows, but ICP-RIE provides a wider process window for demanding research applications.

Q: What wafer sizes does the ICP-RIE platform support?

The ICP-RIE platform supports 4 inch to 12 inch wafers, with configurable loading, gas, RF, and temperature options depending on process needs.

Q: Should I use this ICP-RIE system page or the ICP-RIE technology guide?

Use this product page when you are selecting an ICP-RIE etching system, checking wafer size, ICP power, bias control, gas lines, temperature range, applications, or quote requirements. Use the ICP-RIE Technology guide when you want to learn the principles of inductively coupled plasma generation, source power, bias power, and high-density plasma etching.

High-density plasma etching for silicon, MEMS, diamond, compound semiconductors, and process development where independent plasma density and ion energy control are critical.

Talk to an Engineer

This platform is configured and quoted to your process — it is not sold online.

NineScrolls ICP-RIE plasma etching platform

Wafer Size

4-12 in

ICP Power

1000-3000 W

Gas Lines

5 std.

Stage Temp

-70 to 200 °C

Process-first configuration

Configure the etch process before the chamber.

ICP-RIE purchases usually start with materials, profile goals, wafer size, thermal control, gas chemistry, and allowable damage. This page keeps those engineering decisions visible before pushing a catalog choice.

Deep Silicon Etching

High-density plasma process control for MEMS, TSV, Bosch-style workflows, and profile-sensitive silicon removal.

High aspect ratioSidewall controlMEMS and TSV

Compound Semiconductor Etching

Independent source and bias control for GaN, GaAs, InP, SiC, Ga2O3, and related device research.

GaN / SiC / GaAsLow damageProfile tuning

Diamond And Hard Materials

Configurable plasma chemistry and chuck temperature options for diamond, sapphire, and hard-to-process materials.

DiamondSapphireWide bandgap

Core Process Windows

What this platform is built to control.

Compare RIE

High-density plasma

Separate ICP source control for high etch rate and chemistry flexibility.

Independent ion energy

Bias RF tuning helps control anisotropy, damage, and profile shape.

Thermal process window

Configurable chuck temperature supports low-temperature and high-temperature process work.

Technical Specifications

Homepage-level clarity, detail-page confidence.

Core values are taken from the equipment guide and presented for fast screening. Final configurations should be confirmed with engineering during quote review.

Wafer Size: 4-12 in
Gas System: 5 lines std.
Stage Temp: -70 to 200 °C
RF Power: 1000-3000 W
Bias RF: 300-1000 W optional
Uniformity: < +/-5% edge exclusion
Vacuum: TMP + mechanical pump
Loading: Open-load or load-lock

Applications

Built for research teams that need process range.

MEMS fabrication

Advanced packaging

Photonics

Power electronics

Failure analysis

Materials research

Where this platform is applied

Process detail for each application area.

Research evidence

Peer-reviewed research

Published work using the ICP etching platform we represent · 20 papers

Sub-10-nm Lithography for Sn4-Oxo Clusters: Effect of Molecular Polarity on Sensitivity and Resolution
Advanced Functional Materials 2025
View source
Enhanced Lithography Performance with Imino/Imido Benzenesulfonate Photoacid Generator-Bound Polymer Resists
Small 2025
View source
Femtosecond laser fabrication of SiC microlens arrays as integrated light homogenizer and splitter
IEEE Photonics Technology Letters 2023
View source
Biomimetic sapphire windows enabled by inside-out femtosecond laser deep-scribing
PhotoniX 2022
View source
Single Cubic Metalens for Compact 3D Microscopic Imaging with Extended Depth of Field
ACS Photonics 2026
View source
Broadband Complex Amplitude-Modulated Metasurfaces for Nanoprinting and Vectorial Hologram with Continuously Varying Linear Polarization Distributions
Advanced Optical Materials 2024
View source
High-Performance Color Printing and Information Encryption Enabled by Silicon Carbide Metasurface
Advanced Functional Materials 2026
View source
Periodic Microstructures Fabricated by Laser Interference with Subsequent Etching
Nanomaterials 2020
View source
Non-invasive and fully two-dimensional quantitative visualization of transparent flow fields enabled by photonic spin
Light: Science & Applications 2025
View source
Diffraction-Free Omnidirectional Antireflection Binary Metasurface via Femtosecond Laser Hybrid Etching
Advanced Materials 2026
View source
Mitigating the Thermal Bottleneck in Polycrystalline Diamond Films by Gradient ICP Etching of the Nucleation Layer
Materials 2026
View source
Experimental study of inductively coupled plasma etching of patterned single crystal diamonds
Scientific Reports 2025
View source
Integration of multifocal microlens array on silicon microcantilever via femtosecond-laser-assisted etching technology
Micromachines 2022
View source
Selenization Mechanism of Nearly 4 in. Single-Oriented PtSe2 and PtSe2/n-Si/n+-Si 2D-3D PIN Wide-Spectrum Polarization Detectors
ACS Applied Materials & Interfaces 2025
View source
Neural-Optic Co-Designed Polarization-Multiplexed Metalens for Compact Computational Spectral Imaging
Laser & Photonics Reviews 2024
View source
Sapphire concave microlens arrays for high-fluence pulsed laser homogenization
IEEE Photonics Technology Letters 2019
View source
Broadband and high-speed micro-scale PtSe2/Si 2D-3D PIN photodetector for on-chip polarization-encoded communication and imaging
Applied Surface Science 2026
View source
Rapid engraving of artificial compound eyes from curved sapphire substrate
Advanced Functional Materials 2019
View source
Silicon three-dimensional structures fabricated by femtosecond laser modification with dry etching
Applied Optics 2017
View source
Wear-resistant blazed gratings fabricated by etching-assisted femtosecond laser lithography
Journal of Lightwave Technology 2021
View source

Process evidence

Process Results

Peer-reviewed SEM results published by research groups working on this ICP-RIE platform family — diamond, sapphire, GaAs, and silicon. Each card names the system its paper used and links to the source.

SEM image of a polycrystalline diamond film after five hours of ICP etching — Polycrystalline diamond, etched nucleation layer · ICP-S-150Lv Y. et al., Materials 19, 759 (2026), CC BY 4.0 — cropped from Fig. 3(d)

SEM image of a moth-eye antireflective microstructure array etched in sapphire — Moth-eye antireflective array in sapphire · ICP-100ALiu X.-Q. et al., PhotoniX 3, 1 (2022), CC BY 4.0 — cropped and resized from Fig. 4(g)

SEM cross-section of high-aspect-ratio slits scribed and etched into sapphire — High-aspect-ratio sapphire scribe, cross-section · ICP-100ALiu X.-Q. et al., PhotoniX 3, 1 (2022), CC BY 4.0 — cropped and resized from Fig. 3(f)

SEM image of a wave-line microstructure array fabricated in sapphire — Wave-line microstructure in sapphire · ICP-100ALiu X.-Q. et al., PhotoniX 3, 1 (2022), CC BY 4.0 — cropped and resized from Fig. 3(a)

SEM image of a 3 micrometre period grating etched in GaAs — 3 µm period grating in GaAs · ICP-100AYang S. et al., Nanomaterials 10, 1313 (2020), CC BY 4.0 — cropped and resized from Fig. 2(c)

SEM image of a rectangular silicon microlens array — Rectangular silicon microlens array · ICP-100AWang B. et al., Micromachines 13, 218 (2022), CC BY 4.0 — cropped from Fig. 7(a)

Related Resources

Help engineers choose the right process path.

Resource

Learn ICP-RIE Technology

Technology guide for ICP-RIE principles

Read note

Resource

Compare ICP-RIE vs RIE

Process selection comparison

Read note

Resource

Deep Silicon Bosch Process

DRIE and deep silicon etch primer

Read note

Resource

Diamond Semiconductor Processing

Wide-bandgap diamond etch guide

Read note

FAQ

Frequently Asked Questions

What applications is the ICP-RIE platform best suited for?

The ICP-RIE platform is designed for high-aspect-ratio silicon etching, MEMS fabrication, compound semiconductor processing, diamond processing, photonics, advanced packaging, and process development where independent plasma density and ion energy control matter.

What is the difference between ICP-RIE and RIE?

ICP-RIE uses a high-density inductively coupled plasma source with separate bias control, allowing plasma density and ion energy to be tuned independently. Standard RIE is simpler and useful for many general etch workflows, but ICP-RIE provides a wider process window for demanding research applications.

What wafer sizes does the ICP-RIE platform support?

The ICP-RIE platform supports 4 inch to 12 inch wafers, with configurable loading, gas, RF, and temperature options depending on process needs.

Should I use this ICP-RIE system page or the ICP-RIE technology guide?

Use this product page when you are selecting an ICP-RIE etching system, checking wafer size, ICP power, bias control, gas lines, temperature range, applications, or quote requirements. Use the ICP-RIE Technology guide when you want to learn the principles of inductively coupled plasma generation, source power, bias power, and high-density plasma etching.

Request a quote

Build an ICP-RIE process window with NineScrolls

Share your material stack, target profile, wafer size, gases, temperature needs, and lab timeline.