Deep Silicon Etching
High-density plasma process control for MEMS, TSV, Bosch-style workflows, and profile-sensitive silicon removal.
High aspect ratioSidewall controlMEMS and TSV
Equipment Platform
ICP-RIE Plasma Etching Platform
High-density plasma etching for silicon, MEMS, diamond, and compound semiconductor research.
- Wafer Size
- 4–12 in
- ICP Power
- 1000–3000 W
- Gas Lines
- 5 standard
- Stage Temp (option)
- -70 to 200 °C
Configuration dependent. Final specifications confirmed during engineering review.
Budgetary range: US$189,000–$209,000. Budgetary reference based on two recent research-platform configurations. Final pricing depends on process chemistry, pumping, chuck cooling, automation, installation, and destination taxes or duties.
This platform is configured and quoted to your process — it is not sold online.
How it works
From plasma to pattern.
Follow ion-assisted surface reactions through a representative etch sequence.
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Ions
Reactive species
Volatile products
Representative configuration with RF bias. Schematic — not to scale. Chemistry and results depend on the recipe.
Process-first configuration
Configure the etch process before the chamber.
ICP-RIE purchases usually start with materials, profile goals, wafer size, thermal control, gas chemistry, and allowable damage. These process requirements guide the final platform configuration.
Compound Semiconductor Etching
Independent source and bias control for GaN, GaAs, InP, SiC, Ga2O3, and related device research.
GaN / SiC / GaAsLow damageProfile tuning
Diamond And Hard Materials
Configurable plasma chemistry and chuck temperature options for diamond, sapphire, and hard-to-process materials.
DiamondSapphireWide bandgap
Core Process Windows
What this platform is built to control.
Independent source and bias control
Separate RF generators let you tune plasma density and ion bombardment more independently, giving you more control over etch rate, selectivity, profile, and substrate damage.
Wafer temperature control
Helium backside cooling improves heat transfer between the wafer and the temperature-controlled electrode, which helps hold wafer temperature steady during the etch. An optional -70 to 200 °C stage extends the range for low- and high-temperature chemistries.
Chamber setup per chemistry
A chamber liner and a configurable plasma discharge gap let the chamber be set up for the chemistry and materials it will run.
Technical Specifications
Key specifications for process planning and system selection.
Review core platform capabilities for initial system selection. Final configurations are confirmed with our engineering team during quote review.
- Wafer Size
- 4-12 in
- Gas System
- 5 lines std. + He backside cooling
- Stage Temp
- -70 to 200 °C, optional
- RF Power
- 1000-3000 W
- Bias RF
- 300-1000 W optional
- Uniformity
- < +/-5% edge exclusion
- Vacuum
- TMP + mechanical pump
- Loading
- Open-load or load-lock
Applications
Built for research teams that need process range.
Silicon MEMS and TSV: deep, profile-controlled etching
Wide-bandgap power and RF: GaN, SiC, Ga₂O₃
III-V photonics: GaAs and InP
Diamond films: nucleation-layer removal
Optical microstructures: sapphire antireflection arrays, silicon microlenses
2D materials and refractory metals: MoS₂, BN, graphene, W, Ta, Mo
Failure analysis: SiO₂, SiNx and silicon layer removal
Where this platform is applied
Process detail for each application area.
Research evidence
Peer-reviewed research
Published work using the ICP etching platform we represent · 20 papers
- View source
Sub-10-nm Lithography for Sn4-Oxo Clusters: Effect of Molecular Polarity on Sensitivity and Resolution
Advanced Functional Materials 2025
- View source
Enhanced Lithography Performance with Imino/Imido Benzenesulfonate Photoacid Generator-Bound Polymer Resists
Small 2025
- View source
Femtosecond laser fabrication of SiC microlens arrays as integrated light homogenizer and splitter
IEEE Photonics Technology Letters 2023
- View source
Biomimetic sapphire windows enabled by inside-out femtosecond laser deep-scribing
PhotoniX 2022
- View source
Single Cubic Metalens for Compact 3D Microscopic Imaging with Extended Depth of Field
ACS Photonics 2026
- View source
Broadband Complex Amplitude-Modulated Metasurfaces for Nanoprinting and Vectorial Hologram with Continuously Varying Linear Polarization Distributions
Advanced Optical Materials 2024
- View source
High-Performance Color Printing and Information Encryption Enabled by Silicon Carbide Metasurface
Advanced Functional Materials 2026
- View source
Periodic Microstructures Fabricated by Laser Interference with Subsequent Etching
Nanomaterials 2020
- View source
Non-invasive and fully two-dimensional quantitative visualization of transparent flow fields enabled by photonic spin
Light: Science & Applications 2025
- View source
Diffraction-Free Omnidirectional Antireflection Binary Metasurface via Femtosecond Laser Hybrid Etching
Advanced Materials 2026
- View source
Mitigating the Thermal Bottleneck in Polycrystalline Diamond Films by Gradient ICP Etching of the Nucleation Layer
Materials 2026
- View source
Experimental study of inductively coupled plasma etching of patterned single crystal diamonds
Scientific Reports 2025
- View source
Integration of multifocal microlens array on silicon microcantilever via femtosecond-laser-assisted etching technology
Micromachines 2022
- View source
Selenization Mechanism of Nearly 4 in. Single-Oriented PtSe2 and PtSe2/n-Si/n+-Si 2D-3D PIN Wide-Spectrum Polarization Detectors
ACS Applied Materials & Interfaces 2025
- View source
Neural-Optic Co-Designed Polarization-Multiplexed Metalens for Compact Computational Spectral Imaging
Laser & Photonics Reviews 2024
- View source
Sapphire concave microlens arrays for high-fluence pulsed laser homogenization
IEEE Photonics Technology Letters 2019
- View source
Broadband and high-speed micro-scale PtSe2/Si 2D-3D PIN photodetector for on-chip polarization-encoded communication and imaging
Applied Surface Science 2026
- View source
Rapid engraving of artificial compound eyes from curved sapphire substrate
Advanced Functional Materials 2019
- View source
Silicon three-dimensional structures fabricated by femtosecond laser modification with dry etching
Applied Optics 2017
- View source
Wear-resistant blazed gratings fabricated by etching-assisted femtosecond laser lithography
Journal of Lightwave Technology 2021
Process evidence
Process Results
Peer-reviewed results published by research groups working on this ICP-RIE platform family — diamond, sapphire, GaAs, and silicon. Each card names the system its paper used and links to the source.
System Views
System Views
Actual system photos: the chamber with the lid raised, the etch module exterior with the RF unit on top, and the module rear with its power, interface, and RF-in connections. Use them to review the source geometry and service access before configuration review.
System overview · 2 minutes
Inside the ICP-RIE platform.
See how independent ICP source and RF bias control shape the etch, follow the gas, vacuum and thermal paths through the system, and explore the chamber architecture and optional load-lock.
Representative configuration; options vary. Process results, transfer mechanics and selected internal views are illustrative. Software screens show example values. The load-lock is optional.
Service & Support
Supported from factory acceptance through operation
Every ICP-RIE system is factory-acceptance tested before shipment, with the acceptance and as-shipped configuration documented. NineScrolls supports the system through commissioning and operation, for both equipment issues and process questions.
Service terms and support optionsDelivered with every system
- Factory acceptance checklist and signed record
- As-shipped configuration record
- Facility requirements and installed-utilities record
- Warranty and service contacts
- Machine-specific NineScrolls Academy materials
Standard coverage
- 2-year limited warranty
- Replacement parts and remote technical support
- Software updates for 3 years
Factory acceptance
Before shipment, the system is tested for vacuum, RF, gas control and etch performance on standard silicon test wafers, using an agreed FAT protocol or the NineScrolls standard FAT procedure. Customer-specific materials and process results are outside the standard FAT scope.
Installation and commissioning
Remote commissioning guidance is included. On-site installation, commissioning and initial process verification can be quoted with the system, using verification conditions agreed in advance.
Training
Operator training can be quoted with the system. Every supported system also receives machine-specific documentation and training materials through NineScrolls Academy.
Ongoing support
Diagnosis starts remotely, from alarm records, recipe data and photos. On-site service can be arranged when needed; labor and travel are quoted unless covered by a service agreement.
- Equipment
- Vacuum, RF, gas delivery, interlocks and controls.
- Process
- Etch rate, uniformity, profile and repeatability. We help work out whether the recipe, chamber condition, hardware or facility needs to change. Recipe development for new materials or structures is scoped separately.
Parts and uptime
Warranty replacement parts are supplied by NineScrolls. A recommended spare-parts package can be quoted based on the system configuration and support needs, and we can identify customer-held spares for critical components where warranted.
Related Resources
Help engineers choose the right process path.
Resource
Learn ICP-RIE Technology
Technology guide for ICP-RIE principles
Resource
Compare ICP-RIE vs RIE
Process selection comparison
Resource
Deep Silicon Bosch Process
DRIE and deep silicon etch primer
Resource
Diamond Semiconductor Processing
Wide-bandgap diamond etch guide
FAQ
Frequently Asked Questions
What applications is the ICP-RIE platform best suited for?
The ICP-RIE platform is designed for high-aspect-ratio silicon etching, MEMS fabrication, compound semiconductor processing, diamond processing, photonics, advanced packaging, and process development where independent plasma density and ion energy control matter.
What is the difference between ICP-RIE and RIE?
ICP-RIE uses a high-density inductively coupled plasma source with separate bias control, allowing plasma density and ion energy to be tuned independently. Standard RIE is simpler and useful for many general etch workflows, but ICP-RIE provides a wider process window for demanding research applications.
What wafer sizes does the ICP-RIE platform support?
The ICP-RIE platform supports 4 inch to 12 inch wafers, with configurable loading, gas, RF, and temperature options depending on process needs.
Should I use this ICP-RIE system page or the ICP-RIE technology guide?
Use this product page when you are selecting an ICP-RIE etching system, checking wafer size, ICP power, bias control, gas lines, temperature range, applications, or quote requirements. Use the ICP-RIE Technology guide when you want to learn the principles of inductively coupled plasma generation, source power, bias power, and high-density plasma etching.
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