High-k Dielectrics
Atomic-layer control for Al2O3, HfO2, TiO2, and related oxide films used in gate dielectric and passivation research.
Al2O3 / HfO2Thickness controlGate stacks
Equipment Platform
ALD Atomic Layer Deposition Platform
Atomic-level thin film deposition for conformal coatings, high-k dielectrics, passivation layers, 3D structures, and research material stacks.
Wafer Size
4-12 in
Wafer Temp
20 to 400 °C
Uniformity
<1%
Precursor
2-6 lines
Process-first configuration
Control each film cycle around surface chemistry and geometry.
ALD selection starts with precursor chemistry, purge efficiency, temperature window, nucleation behavior, aspect ratio, plasma-assist requirements, and target film properties. The platform is configured around those self-limiting process constraints.
3D Conformal Coatings
High step coverage for high-aspect-ratio structures, MEMS devices, porous materials, and complex research substrates.
Conformal coverageHigh aspect ratio3D structures
Plasma-Enhanced ALD
Optional remote plasma supports lower-temperature process windows and additional material chemistries.
PEALD optional300-1000 W plasmaLow-temperature films
Core Process Windows
What this platform is built to control.
Self-limiting chemistry
Sequential precursor exposure and purge cycles support atomic-scale thickness control and repeatable growth-per-cycle.
Conformality on 3D structures
The ALD process is built for coverage inside high-aspect-ratio, porous, or non-planar features where line-of-sight deposition struggles.
Thermal or plasma-assisted modes
Thermal ALD and optional PEALD let engineers tune temperature, reactivity, and film properties around substrate limits.
Technical Specifications
Clear screening values for ALD process planning.
Core values are taken from the equipment summary and legacy datasheet table for fast process screening. Final precursor and plasma configuration should be confirmed with engineering during quote review.
- Wafer Size
- 4-12 in
- Wafer Temperature
- 20 to 400 °C
- Uniformity
- <1%
- Precursor Lines
- 2-6 lines
- Remote Plasma
- 300-1000 W optional
- Loading
- Open-load or load-lock
Applications
Built for conformal thin-film process development.
Gate dielectrics
Passivation layers
MEMS coatings
Energy storage materials
Optical coatings
2D material devices
Research evidence
Peer-reviewed research
Related Resources
Help engineers choose the right ALD process path.
FAQ
Frequently Asked Questions
What is atomic layer deposition and how does it work?
Atomic layer deposition builds films through sequential, self-limiting surface reactions. Each cycle deposits a controlled layer, enabling precise thickness control, strong conformality, and high uniformity on complex 3D structures.
What materials can the ALD platform deposit?
The ALD platform supports oxide, nitride, metal, and complex oxide process families including Al2O3, HfO2, SiO2, TiO2, TiN, TaN, Pt, Pd, W, Ru, and related research materials depending on precursor configuration.
When should I choose ALD instead of PECVD?
Choose ALD when the process requires atomic-level thickness control, very high conformality, high-aspect-ratio coverage, or gate dielectric and passivation films on complex geometries. PECVD is typically better for higher-rate dielectric deposition when perfect conformality is less critical.
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